Master Thesis: Development and Modeling of highly efficient RF-Devices

Background

Fraunhofer IAF is one of the world‘s leading research institutions in the field of III-V semiconductors and synthetic diamond developing technologies for use in communication, energy, mobility, industry and medicine. In our microelectronics department we assign a master thesis in the field of high-electron-mobility-transistor (HEMT) device development and modeling for RF-power amplifiers and systems.

Tasks

• Literature research.

• RF-characterization of our proprietary GaN based HEMT technologies.

• Scalable compact device modeling of advanced high-power RF-HEMT-devices.

• Technology Computer Aided Design (TCAD) simulations of GaN HEMTs to improve output power and efficiency.

• Thermal simulation and estimation of thermal budget of high-power GaN RF-HEMTs.

• Design and characterization of high power HEMT evaluation circuits based on extracted model data.

What we offer

A thesis at Fraunhofer IAF allows you to apply the knowledge you have acquired during your studies to specific research projects. With us, you can work scientifically and gain project experience at the same time. We offer modern laboratory equipment, supervision by experienced scientists and a variety of opportunities for further education.

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