Master Thesis: GaN-based RF Power Devices and Circuits
Background
Fraunhofer IAF is one of the world‘s leading research institutions in the field of III-V semiconductors and synthetic diamond developing technologies for use in communication, energy, mobility, industry and medicine.
Master’s thesis topics
Master’s thesis topics in the area of RF power devices and circuits are based on our in-house GaN HEMT technologies and reflect our research interests, which currently include the following areas:
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Packaged/integrated high-power amplifiers with output power levels in the kW-range.
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Integrated power amplifiers (e.g., Doherty PAs, Wideband PAs) for SatCom or 5G/6G
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Multi-functional transceiver MMICs and their individual building blocks (e.g., LNAs, PAs, mixers, frequency multipliers, phase shifters, attenuators, power detectors, …)
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Design and optimization of active devices (diodes, HEMTs) for emerging applications and frequency bands.
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Characterization and thermal/electrical modeling of active and passive devices.
What we offer
A thesis at Fraunhofer IAF allows you to apply the knowledge you have acquired during your studies to specific research projects. With us, you can work scientifically and gain project experience at the same time. We offer modern laboratory equipment, supervision by experienced scientists and a variety of opportunities for further education.
Contact
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Dr. Dirk Schwantuschke
Phone +49 761 5159-449
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